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New method to measure the source and drain resistance of the GaAs MESFET

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2 Author(s)
Long Yang ; University of California, Santa Barbera, CA ; Long, S.I.

The method to measure the source resistance of the GaAs MESFET proposed here is able to determine its value directly without correcting for the channel resistance of the GaAs MESFET. A low gate current measurement condition is employed which leads to accurate determination of Rsand Rdover a relatively wide range of drain currents.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 2 )

Date of Publication:

Feb 1986

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