IMPACT—A point-defect-based two-dimensional process simulator: Modeling the lateral oxidation-enhanced diffusion of dopants in silicon

This paper presents a point-defect-based two-dimensional process simulator, the Isen modeling package for integrated circuits technology (IMPACT). IMPACT simulates both dopant and interstitial redistribution during the usual IC fabrication steps. Based upon Hu's model, a study has been made on the interstitial kinetics, and 2D oxidation-enhanced diffusion has been investigated. A complete set of model parameters is given for dry oxidation in silicon. A good agreement is obtained for a wide range of experiments: time-dependent excess self-interstitial concentration deduced from stacking fault length measurements; 1D and 2D oxidation enhanced diffusion, and diffusivity enhancement due to backside oxidations.