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Hot-electron effects on channel thermal noise in fine-line NMOS field-effect transistors

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1 Author(s)
Jindal, R.P. ; AT&T Bell Laboratories, Murray Hill, NJ

Submicrometer NMOSFET's exhibit excess channel thermal noise. This excess noise increases with an increase in drain-to-source voltage and a decrease in channel length. A strong correlation between high electric field and excess noise strongly suggests hot electrons as being responsible for this excess noise.

Published in:

Electron Devices, IEEE Transactions on  (Volume:33 ,  Issue: 9 )

Date of Publication:

Sep 1986

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