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Monolithic thin-film photoconductor—AC EL structure with extrinsic memory by optical coupling

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2 Author(s)
Thioulouse, P. ; Center National d''Etudes des Télécommunications, Bagneux, France ; Solomon, I.

A novel memory ZnS:Mn ac thin-film EL device is described. The deposition of a photoconducting thin film of amorphous silicon on a conventional EL layer stack induces a hystereticL-Vcharacteristic. Operating characteristics are discussed. Outstanding features are a typical memory margin of 9V peak and electrical switching times (ON and OFF) shorter than 2 ms under 1-kHz CW excitation.

Published in:

Electron Devices, IEEE Transactions on  (Volume:33 ,  Issue: 8 )

Date of Publication:

Aug 1986

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