Monolithic thin-film photoconductor—AC EL structure with extrinsic memory by optical coupling

A novel memory ZnS:Mn ac thin-film EL device is described. The deposition of a photoconducting thin film of amorphous silicon on a conventional EL layer stack induces a hysteretic
L-V
characteristic. Operating characteristics are discussed. Outstanding features are a typical memory margin of 9V peak and electrical switching times (ON and OFF) shorter than 2 ms under 1-kHz CW excitation.