Thin ZrO2layers were used to realize MOS capacitors with aluminum, polysilicon, and molybdenum gate electrodes. The layers, 300-600 Å in thickness, were obtained by metal organic chemical vapor deposition. The effects of various high-temperature treatments as well as gate material deposition conditions on the MOS capacitor properties were studied. Processing conditions compatible with standard silicon technology were established to obtain capacitors suitable for advanced DRAM application. Relative dielectric constant ∈ ≥ 16, breakdown field MV/cm, and leakage currents at applied voltage of 5V around 10-8A/cm2enable the realization of capacitors with dielectric layer equivalent to 35 Å of SiO2.