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n-p-n silicon lateral phototransistors for hybrid integrated optical circuits

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3 Author(s)
Sun-Yuan Huang ; University of California at San Diego, La Jolla, CA ; Esener, S. ; Lee, S.H.

An etched mesa silicon lateral phototransistor (EMS-LPT) suitable for detecting the light signal from optical channel waveguides has been designed and fabricated. In this paper both n+-p-n+uniform base and n+-p-p--n+double-diffused EMS-LPT's are reported. The photoactive region of the EMS-LPT is highly localized and can be easily coupled either via an evanescent field or to a grating coupler on a channel waveguide. Light coupling, gain, speed, and signal-to-noise ratio of the device are thereby greatly improved. The fabrication techniques of the EMS-LPT's are compatible with those of MOSFET's, permitting integration of multiple EMS-LPT's and MOSFET load transistors to form optically addressed inverters on the same silicon chip. By flip-chip bonding LiNbO3and silicon substrates and coupling LiNbO3channel waveguides to EMS-LPT's via grating couplers, we produce electrooptic switches with optical input and output.

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Electron Devices, IEEE Transactions on  (Volume:33 ,  Issue: 4 )