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Submicrometer n-channel enhancement-mode silicon MOSFET's with polysilicon gate lengths as small as 0.35 µm were fabricated using focused-ion-beam lithography. The polysilicon gate was patterned by a 80-kV Au-Si ion beam using a negative polystyrene resist. Transconductance values of 140 mS/mm were obtained for devices with gatelengths of 0.4 µm and gate oxide thickness of 10 nm. Short-channel effects were minimal in these devices.
Date of Publication: Feb 1986