Referenced Items are not available for this document.
Submicrometer n-channel enhancement-mode silicon MOSFET's with polysilicon gate lengths as small as 0.35 µm were fabricated using focused-ion-beam lithography. The polysilicon gate was patterned by a 80-kV Au-Si ion beam using a negative polystyrene resist. Transconductance values of 140 mS/mm were obtained for devices with gatelengths of 0.4 µm and gate oxide thickness of 10 nm. Short-channel effects were minimal in these devices.
Published in:
Electron Devices, IEEE Transactions on
(Volume:33
,
Issue:
2
)
Date of Publication: Feb 1986
- Page(s):
- 310 - 311
- ISSN :
- 0018-9383
- Digital Object Identifier :
- 10.1109/T-ED.1986.22484
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 August 2005
- Issue Date :
- Feb 1986
- Sponsored by :
- IEEE Electron Devices Society
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