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By utilizing the voltage contrast mode observed in a scanning electron microscope, the authors have fabricated equipment which they call auto-calibrated potential map drawing equipment (AP-MADE). This equipment can be used to observe the two-dimensional potential distribution on a semiconductor device surface and to draw its equipotential curves. Therefore, it can be used as a semiconductor device analyzer. Utilizing the APMADE, the transfer characteristics of plasma-coupled devices are analyzed in detail and its best asymmetric structure is pointed out quantitatively.