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Optically induced, spatially resolved backgating transients in GaAs FETs

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3 Author(s)
Carruthers, T.F. ; Naval Research Laboratory, Washington, DC ; Anderson, W.T. ; Weller, J.F.

Optical pulses have been found to produce long-term current transients in GaAs field-effect transistors. The long durations--of the order of a second--and the fact that transient current decreases may be induced display a similarity to backgating transients induced by bursts of ionizing radiation. The semiconductor region adjacent to the connecting strip between the gate electrode and the gate bonding pad, where longitudinal source-to-drain electric fields are lowest, is particularly sensitive to optical backgating.

Published in:

Electron Devices Meeting, 1985 International  (Volume:31 )

Date of Conference:

1985