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High-speed low-power circuits fabricated using a submicron NMOS technology

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7 Author(s)
Fichtner, Wolfgang ; AT&T Bell Laboratories, Murray Hill, NJ ; Hofstatter, E.A. ; Watts, R.K. ; Bayruns, R.J.
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We present results on very high-speed low-power devices and circuits fabricated using a NMOS technology scaled to submicron dimensions. These results illustrate the electrical behavior of single minimum-size devices, and present the performance of several submicron circuits, such as ring oscillators, a 3-GHz divide-by-two counter and a 90- MHz 16 × 16 multiplier.

Published in:

Electron Device Letters, IEEE  (Volume:6 ,  Issue: 12 )