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A monolithic four-channel photoreceiver integrated on a GaAs substrate using metal-semiconductor-metal photodiodes and FET's

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6 Author(s)
M. Makiuchi ; Fujitsu Ltd., Atsugi, Kanagawa, Japan ; H. Hamaguchi ; T. Kumai ; M. Ito
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The first fabrication of a monolithic four-channel photoreceiver on a GaAs substrate, using metal-semiconductor-metal (MSM) photodiodes and GaAs metal-semiconductor field-effect transistors (MESFET's) is described. The present photoreceiver operating in the 0.8- µm wavelength region has shown uniform sensitivity with little crosstalk between channels and also giga-bit response. The result suggests that the use of MSM photodiodes and FET's has good expansibility toward high-density and multi-channel monolithic integration.

Published in:

IEEE Electron Device Letters  (Volume:6 ,  Issue: 12 )