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Theoretical and experimental analysis of a—Si:H logic circuits

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3 Author(s)
Leroux, T. ; LETI/IRDI, Grenoble Cedex, France ; Truche, R. ; Chenevas-Paule, A.

Expressions of the static behavior of a-Si-H TFT's previously established in our laboratory are used in order to calculate the theoretical transfer characteristics of enhanced/enhanced (E/E) inverters. These characteristics are shown to be strongly influenced by the parameters of the band-tail distribution of localized states (especially its critical temperature Tc), and consequently by the quality of the semiconductor thin film. Several experimental results are presented to confirm the obtained expressions.

Published in:

Electron Device Letters, IEEE  (Volume:6 ,  Issue: 11 )

Date of Publication:

Nov 1985

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