A low temperature method of fabricating conductive (3.5 Ω/ sq.) p+/n junction diodes possessing excellent characteristics with reverse-bias leakage less than -3 nA.cm-2at -5 V is described. Single crystal n-type 〈100〉 Si is implanted with 60 keV11B+through 0.028-µm thick sputtered Ti film. Rapid thermal annealing (RTA) in an N2ambient simultaneously forms a 0.36-µm deep p+/n junction and a 0.063-µm thick bilayer of TiN and TiSi2with a resistivity of 22 µΩ.cm. The electrical properties of these diodes are not degraded by annealing for 30 min at 500°C, suggesting that the outer layer of TiN is an effective diffusion barrier between TiSi2and Al.