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Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization

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7 Author(s)
Brooks, R.C. ; Raytheon Company, Lexington, MA ; Chen, C.L. ; Chu, A. ; Mahoney, L.J.
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We have fabricated the low resistance ohmic contacts to p-type GaAs. Specific contact resistances as low as 7 × 10-7Ω.cm2have been obtained for contacts prepared by heat treating Zn/Pd/Au metallizations deposited on p-type epitaxial GaAs layers with an acceptor concentration of 1.5 × 1019cm-3. These contacts are reproducible, simple to fabricate, exhibit excellent adhesion, and have a uniformly smooth surface morphology.

Published in:

Electron Device Letters, IEEE  (Volume:6 ,  Issue: 10 )