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Temperature dependence of backgating effect in GaAs integrated circuits

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2 Author(s)
C. P. Lee ; Rockwell International Corporation, Thousand Oaks, CA ; M. F. Chang

The backgating effect in GaAs IC's has been found to be temperature dependent. The threshold voltage for backgating increases with temperature, resulting in lower backgating at higher temperatures. The measured activation energy of the backgating threshold versus temperature is 83 meV, in agreement with the energy difference between the Fermi level and the EL2 level at the surface of semi-insulating GaAs.

Published in:

IEEE Electron Device Letters  (Volume:6 ,  Issue: 8 )