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The effect of MOS Channel length on the performance of insulated gate transistors

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2 Author(s)
Chow, T.P. ; General Electric Company, Schenectady, NY ; Baliga, B.J.

The effect of MOS channel length on n-channel 600-V insulated gate transistors (IGT's) is evaluated. When the channel length was decreased from 1.9 to 0.8 µm, a doubling of the forward conduction current was measured at a forward drop of 2 V for IGT's with a turn-off time of 2 µs. Also, a better forward drop versus turnoff time tradeoff were observed. However, a 25-50-percent decrease in latching current was measured for the short-channel devices under dynamic switching conditions at 150°C.

Published in:

Electron Device Letters, IEEE  (Volume:6 ,  Issue: 8 )