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Simultaneous formation of silicide ohmic contacts and shallow p+-n junctions by ion-beam mixing and rapid thermal annealing

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3 Author(s)
Kwong, D.L. ; University of Notre Dame, Notre Dame, IN ; Meyers, D.C. ; Alvi, N.S.

Low-resistivity, uniform molybdenum silicide layers, and shallow p+-n junctions with good electrical characteristics have been formed using ion-beam mixing and rapid thermal annealing (RTA). Detailed reverse leakage current data on RTA annealed diodes, which were formed by implanting BF2+into Si substrates through the molybdenum films deposited on Si, are presented. The process has a great potential for CMOS fabrication with self-aligned silicided source, drain, and gate.

Published in:

Electron Device Letters, IEEE  (Volume:6 ,  Issue: 5 )

Date of Publication:

May 1985

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