Simultaneous formation of silicide ohmic contacts and shallow p+-n junctions by ion-beam mixing and rapid thermal annealing

Low-resistivity, uniform molybdenum silicide layers, and shallow p
⁺
-n junctions with good electrical characteristics have been formed using ion-beam mixing and rapid thermal annealing (RTA). Detailed reverse leakage current data on RTA annealed diodes, which were formed by implanting BF
2
⁺
into Si substrates through the molybdenum films deposited on Si, are presented. The process has a great potential for CMOS fabrication with self-aligned silicided source, drain, and gate.