By Topic

A reply to "Comments on 'small geometry MOS Transistor capacitance measurement method using simple on-chip circuits'"

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Orisian, J.E. ; Stanford University, Stanford, CA ; Iwai, H. ; Walker, J.T. ; Dutton, R.W.

Internodal MOS transistor capacitances are described from a measurement perspective. The on-chip MOS transistor capacitance measurement method, previously reported, is discussed as an application of internodal capacitance theory.

Published in:

Electron Device Letters, IEEE  (Volume:6 ,  Issue: 1 )