Referenced Items are not available for this document.
A double-heterostructure InGaAsP/InP bipolar transistor is described which comprises a CdO film as a wide-gap emitter made by sputter deposition. A current gain as high as 40 has been achieved. The transistor could also be operated in an inverted mode with the CdO layer acting as collector. The main feature of this transistor is the structural compatibility with a 1.5-µm DH laser allowing for monolithic integration.
Published in:
Electron Device Letters, IEEE
(Volume:6
,
Issue:
1
)
Date of Publication: Jan 1985
- Page(s):
- 14 - 17
- ISSN :
- 0741-3106
- Digital Object Identifier :
- 10.1109/EDL.1985.26026
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 August 2005
- Issue Date :
- Jan 1985
- Sponsored by :
- IEEE Electron Devices Society
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