Increasing the current driving capability of epitaxial Schottky-barrier diodes using high-energy implantation

A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of PtSi high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7- µm 2.0 × 10
¹⁶
cm
^-3
epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 × 10
¹²
ions/cm
²
. Higher 265es result in wide-spread degraded device characteristics.