By Topic

Increasing the current driving capability of epitaxial Schottky-barrier diodes using high-energy implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chuang, C.T. ; IBM Thomas J. Watson Research Center, Yorktown Heights, NY ; Li, G.P. ; Tang, D.D.-L. ; Ning, T.H.
more authors

A high-energy (350 keV) phosphorus implant has been used to enhance the current driving capability of PtSi high-barrier Schottky diodes via a reduction in the series resistance of the epitaxial layer as well as a minute change in the barrier height. Devices made on a 0.7- µm 2.0 × 1016cm-3epitaxial layer exhibit well-controlled near-ideal characteristics with an implant dose of 2.5 × 1012ions/cm2. Higher 265es result in wide-spread degraded device characteristics.

Published in:

Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 12 )