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The annealing of phosphorus-ion-implanted cadmium telluride by a pulsed electron beam

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4 Author(s)
Yang, C.B. ; National Tsing Hua University, Taiwan, Republic of China ; Lue, J.T. ; Hwang, H.L. ; Peng, M.L.

A pulsed electron beam of 10 µs FWHM has been successfully applied to anneal phosphorus-implanted CdTe. The sheet resistance drops to 6.3 × 102Ω/ from nearly infinite for the As-implanted wafers as the irradiation intensity exceeds 9.2 J/cm2. A p-type carrier concentration as high as 3 × 1018cm-3has been reached as measured by the van der Pauw and Hall techniques.

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Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 11 )