The annealing of phosphorus-ion-implanted cadmium telluride by a pulsed electron beam

A pulsed electron beam of 10 µs FWHM has been successfully applied to anneal phosphorus-implanted CdTe. The sheet resistance drops to 6.3 × 10
²
Ω/ from nearly infinite for the As-implanted wafers as the irradiation intensity exceeds 9.2 J/cm
²
. A p-type carrier concentration as high as 3 × 10
¹⁸
cm
^-3
has been reached as measured by the van der Pauw and Hall techniques.