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Measurement of intrinsic capacitance of lightly doped drain (LDD) MOSFET's

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4 Author(s)
Ishiuchi, H. ; Toshiba Corporation, Kawasaki, Japan ; Matsumoto, Y. ; Sawada, S. ; Ozawa, O.

Intrinsic capacitance of lightly doped drain (LDD) MOSFET's is measured by means of a four-terminal method without using any on-chip measurement circuits. The gate-to-drain capacitance Cgdof LDD MOSFET's is smaller than that of conventional MOSFET's in the saturation region. The technique is applied to determine the effective channel length.

Published in:

Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 11 )