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Quasi-simultaneous solution method: A new highly efficient strategy for numerical MOST simulations

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3 Author(s)
Meinerzhagen, B. ; University of Aachen, Aachen, Germany ; Dirks, H.K. ; Engl, W.L.

Most numerical MOS-simulators are based on Gummel's nonlinear relaxation method, for which severe convergence problems arise above threshold. A new hierarchical approach for the numerical simulation of MOS-transistors (MOST's) is presented, which overcomes these shortcomings resulting in an improvement of convergence speed of more than one order of magnitude.

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Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 10 )