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Techniques for small-signal analysis of semiconductor devices

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1 Author(s)
Laux, S.E. ; IBM Thomas J. Watson Research Center, Yorktown Heights, NY

Techniques for ascertaining the small-signal behavior of semiconductor devices in the context of numerical device simulation are discussed. Three standard approaches to this problem will be compared: (i) transient excitation followed by Fourier decomposition, (ii) incremental charge partitioning, and (iii) sinusoidal steady-state analysis. Sinusoidal steady-state analysis is shown to be the superior approach by providing accurate, rigorously correct results with reasonable computational cost and programming commitment.

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Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 10 )