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Numerical conformal mapping for treatment of geometry problems in process simulation

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2 Author(s)
Seidl, A. ; Institute für Festkörpertechnologie, Munich, Germany ; Svoboda, M.

In semiconductor modeling, partial differential equations often have to be solved on a domain with a curved boundary. A numerical conformal mapping well suited for process modeling problems is presented. Its use in connection with a moving boundary is explained.

Published in:

Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 10 )

Date of Publication:

Oct 1985

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