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Shortwave infrared 512 × 2 line sensor for earth resources applications

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8 Author(s)
Tower, J.R. ; RCA Advanced Technology Laboratories, Moorestown, NJ ; Pellon, L.E. ; McCarthy, B.M. ; Elabd, H.
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A buttable 512 × 2 IRCCD line image sensor was developed with Pd2Si Schottky-barrier detectors for operation with passive cooling at 120 K in the shortwave infrared (1.1-2.5 µm) band. This monolithic Silicon line imager has 30-µm detectors with 75 percent fill factor and on-chip CCD multiplexers providing one video output for each 512 detector band. The measured performance of the 512 × 2 Pd2Si IRCCD line imager operating at a temperature of 120 K and optical integration time of 4 ms includes a signal-to-noise ratio of 241 for irradiance of 7.2 \\mu W/cm2at \gamma = 1.65 \\mu m, a dynamic range of 5000, and modulation transfer function greater than 60 percent at the Nyquist frequency. Belmish-free imagers with 3 percent nonuniformity under illumination and nonlinearity of 1.25 percent were produced. The total power dissipation of the imager chip is 18 mW.

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Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 8 )