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GaAs MESFET ring oscillator on Si substrate

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7 Author(s)
Ishida, T. ; Oki Electric Industry Company, Ltd., Tokyo, Japan ; Nonaka, T. ; Yamagishi, C. ; Kawarada, Y.
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GaAs MESFET ring oscillators were fabricated on a Si substrate and successfully operated. Epitaxial techniques to grow a GaAs layer on a Si substrate were investigated. The device-quality GaAs epitaxial layer was obtained by introducing a Ge layer (by ionized cluster-beam deposition) and alternating GaAs/GaAIAs layers (by MOCVD). The typical transconductance of 140 mS/mm was obtained for the FET with a 0.5 µm × 10 µm gate. The minimum delay time was 66.5 ps/ gate at a power consumption of 2.3 mW/gate.

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Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 6 )