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Analytical models of GaAs FET's

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1 Author(s)
M. S. Shur ; University of Minnesota, Minneapolis, MN

We consider two analytical models for the calculation of the current-voltage characteristics of GaAs FET's. The first model which we call a "square law model" provides an accurate description of GaAs FETs with low pinchoff voltages (less than 2 V or so for GaAs devices with a 1-µm gate) and an approximate description of GaAs FETs with higher pinchoff voltages, The second model which we call a "complete velocity saturation" model accurately describes high pinchoff voltage devices (higher than 3 V or so for GaAs FETs with a 1-µm gate), but cosiderably overestimates the drain-to-source current in low pinchoff voltage FET's.

Published in:

IEEE Transactions on Electron Devices  (Volume:32 ,  Issue: 1 )