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Single-gate charge-injection device readout modeling and analysis

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2 Author(s)
Wang, S.C.H. ; General Electric Company, Syracuse, NY ; Winn, M.L.

An in-depth performance analysis of the single-gate charge-injection device (CID) based on a piecewise linear charge-voltage (Q-V) model is presented. Both the voltage- and the current-type readout techniques with sequential access scheme for the linear CID arrays are considered. Heuristic views on CID charge readout efficiency degradation due to depletion loading and lag caused by injection pulse loading are illustrated. Transient and steady-state characteristics of the detector are demonstrated by a step-function response. Performance parameters of the CID array as an infrared sensor are summarized and compared to evaluate the relative merits of each readout scheme.

Published in:

Electron Devices, IEEE Transactions on  (Volume:32 ,  Issue: 1 )