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A study of avalanche breakdown in scaled n-MOSFETs

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2 Author(s)
Laux, S.E. ; IBM T. J. Watson Research Center, Yorktown Heights, NY ; Gaensslen, F.H.

The behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined. Both a first-order analytical estimate and rigorous two-dimensional numerical simulation are used to understand the scaling of channel breakdown. A sublinear dependence of sustaining and snapback voltages on channel length is found and explained.

Published in:

Electron Devices Meeting, 1984 International  (Volume:30 )

Date of Conference:

1984

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