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Formation of a TiSi2/n+poly-Si layer by rapid lamp heating and its application to MOS devices

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1 Author(s)
Yachi, T. ; Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan

Ti-Si thin films, co-sputter deposited from a titanium and a poly-Si target, have been rapidly lamp heated within 10 s to produce uniform highly conductive layers comparable to furnace-heated films. MOS devices are fabricated using this Ti-Si rapid lamp heating. It is shown that rapid lamp heating results in much lesser failure involving gate oxide breakdown voltage compared to furnace heating. MOSFET's also exhibit excellent device characteristics.

Published in:

Electron Device Letters, IEEE  (Volume:5 ,  Issue: 7 )