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The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurements

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1 Author(s)
Verret, D.P. ; Texas Instruments, Inc., Houston, TX

Critical analysis is made of a recently proposed method of determining the relationship between the ideality factor and the barrier height of Schottky barrier diodes (SBD's) from I-V measurements. It is demonstrated that, while this method may produce consistent results in situations where a stable reproducible manufacturing process exists, the flat-band barrier height so determined cannot be taken to be the true flat-band barrier height.

Published in:

Electron Device Letters, IEEE  (Volume:5 ,  Issue: 5 )

Date of Publication:

May 1984

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