By Topic

Recrystallization of Si films on thermal SiO2-coated Si substrates using a high-speed e-beam line source

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rensch, D.B. ; Hughes Research Laboratories, Malibu, CA ; Chen, J.Y. ; Rensch, D.B. ; Chen, J.Y.

Lateral zone melting from a fast-scanning (5-30-cm/s) e-beam line source has been used to grow single-crystal films with an area limited only by the e-beam scan field. Electron backscattering contrast and etch pit techniques have been used to study the crystallographic orientation and the extent of single-crystal silicon film growth on thermal SiO2-coated silicon (SOI) wafers.

Published in:

Electron Device Letters, IEEE  (Volume:5 ,  Issue: 2 )