A new field isolation technology for LSI devices is described. This technology features low-temperature (<150° C) sputtered SiO2and photoresist lift-off. MOS devices are fabricated using this isolation technology. It is shown that bird's-beak-free field oxide is formed using a fabrication process which is shorter than that using other isolation methods. It is shown that the narrow-channel effect is significantly reduced in MOSFET's fabricated with this technology.