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A new field isolation technology employing lift-off patterning of sputtered SiO2films

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3 Author(s)
Yachi, T. ; Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan ; Serikawa, T. ; Wada, Tsutomu

A new field isolation technology for LSI devices is described. This technology features low-temperature (<150° C) sputtered SiO2and photoresist lift-off. MOS devices are fabricated using this isolation technology. It is shown that bird's-beak-free field oxide is formed using a fabrication process which is shorter than that using other isolation methods. It is shown that the narrow-channel effect is significantly reduced in MOSFET's fabricated with this technology.

Published in:

Electron Devices, IEEE Transactions on  (Volume:31 ,  Issue: 12 )

Date of Publication:

Dec 1984

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