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III-V compound semiconductor devices: Optical detectors

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3 Author(s)
Stillman, Gregory E. ; University of Illinois at Urbana-Champaign, Urbana, IL ; Robbins, V.M. ; Tabatabaie, N.

This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered as well as the improvements that have been made in avalanche photodiode structures through work in silicon. Also, the results of ionization coefficient measurements on III-V compounds are summarized. Finally, several examples of recent avalanche photodiodes that utlilize the unique properties of heterostructures are presented.

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Electron Devices, IEEE Transactions on  (Volume:31 ,  Issue: 11 )