By Topic

A novel scheme to measure the interface trap density near band edges using CCD's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Madan, S.K. ; MIT, Cambridge, MA ; Bhaumik, B.

A new CCD-based technique to measure the interface trap density is proposed in this paper and the measured values agree with those obtained from the periodic pulse technique. The proposed technique has an operational advantage of measuring the interface state density near the band edge while operating the CCD at any convenient low frequency.

Published in:

Electron Devices, IEEE Transactions on  (Volume:31 ,  Issue: 10 )