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The effect of high fields on MOS device and circuit performance

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3 Author(s)
Sodini, C.G. ; Massachusetts Institute of Technology, Cambridge, MA ; Ko, P.-K. ; Moll, J.L.

A simple analytical model for the MOS device characteristics including the effect of high vertical and horizontal fields on channel carrier velocity is presented. Analytical expressions for the drain current, saturation drain voltage, and transconductance are developed. These expressions are used to examine the effect of scaling the channel length, the gate dielectric thickness, and the bias voltage on device characteristics. Experimental results from various geometry MOS devices are used to verify the trends predicted by the model. Using the physical understanding provided by the model, we examine the effect of device geometry scaling on circuit performance. We suggest that for gate capacitance-limited circuits one should reduce the channel length, and for parasitic capacitance-limited circuits one should reduce the gate dielectric thickness to improve circuit performance.

Published in:

Electron Devices, IEEE Transactions on  (Volume:31 ,  Issue: 10 )