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A new doping transformation procedure for the modeling of arbitrarily doped enhancement-mode MOSFET's is presented. The procedure is based on conservation of charge and electrostatic energy in the depletion region along with the conservation of surface potential and depletion width. The transformation can be extended to short-channel MOSFET's using a charge sharing approximation. Experimental results obtained on n-well CMOS devices with effective channel lengths down to 1.5 µm are used to verify the validity of the models for threshold voltage, drain conductance, and drain current.