By Topic

Design, fabrication, and analysis of 17-18-percent efficient surface-passivated silicon solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Rohatgi, A. ; Westinghouse R&D Center, Pittsburgh, PA ; Rai-Choudhury, P.

A simple analytical model has been developed which provides useful guidelines for fabricating high-efficiency silicon solar cells. Consistent with the model calculations, both surfaces of n+-p-p+solar cells were passivated by a thin layer of thermally grown SiO2. Oxide passivation resulted in 17.2-percent efficient solar cells on 4 Ω . cm base material. Passivated cells show about 3 mA/cm2increases in JSC, ∼20 mV improvement in VOC, and ∼2-percent increase in absolute cell efficiency compared to the counterpart 15.2-percent efficient unpassivated cells. The majority of improvement in VOCcame from the emitter surface passivation, while both front- and back-surface passivation contributed to the increase in JSC. The emitter region should not be regarded as a "dead layer" because emitter surface passivation can increase the quantum efficiency at short wavelengths from 40 percent to greater than 75 percent.

Published in:

Electron Devices, IEEE Transactions on  (Volume:31 ,  Issue: 5 )