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Browse Conference Publications > Electron Devices Meeting, 198 ... Help

VLSI Device fabrication using a unique, highly-selective Si3N4dry etching

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4 Author(s)
Kure, T. ; Hitachi Ltd., Tokyo, Japan ; Kawamoto, Y. ; Hashimoto, N. ; Takaichi, T.

First Page of the Article

Published in:
Electron Devices Meeting, 1983 International  (Volume:29 )

Date of Conference: 1983

Page(s):
757 - 759
Digital Object Identifier :
10.1109/IEDM.1983.190622
Product Type:
Conference Publications

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