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A high photosensitivity interline transfer CCD image sensor with monolithic resin lens array was developed. The resin lens array was made on the 2/3 inch scheme 768(H) × 490(V) pixels interline CCD image sensor by using the resin thermal flow technique. The resin lens array consists of a smooth base resin layer and overlaid vertical stripe semicylindrical lens array corresponding to photodiode vertical lines. The effective photodiode aperture, which was only 40% for the original device, was increased to 80% for the device with monolithic resin lens array. The photosensitivty reached 0.18 µA/µW at 550 nm, which corresponds to 0.4 quantum efficiency.