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This paper reports on a comparison of n-channel and p-channel MOS devices fabricated in a thin layer of LPCVD polysilicon on oxide and the effects of temperature and grain boundary passivation on their device characteristics. Dramatic improvement of drive current and curtailment of leakage current has been observed after the passivation using a plasma of hydrogen. The gate bias dependence of the activation energy has been studied, and is qualitatively explained. The smallest device with a gate length of 1 µm (and an estimated electrical channel length of 0.5 µm) shows well-behaved MOS characteristics.