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A unified bipolar device model

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6 Author(s)
G. M. Kull ; Bell Telephone Laboratories, Murray Hill, NJ ; L. W. Nagel ; S. W. Lee ; P. Lloyd
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This paper describes a compact model for bipolar transistors which includes a unified representation of quasi-saturation effects. The formulation of this model has been verified with results from physical simulations of a high voltage bipolar transistor. Excellent agreement between detailed physical simulations and the compact model is observed over a wide range of operating conditions for dc and ac small-signal characteristics.

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Electron Devices Meeting, 1983 International  (Volume:29 )

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