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Modeling static and dynamic behavior of power devices

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1 Author(s)
Selberherr, S. ; Technische Universität Wein, Wein, Austria

Comments on models of physical parameters involved in numerical power device simulation are given. Problems associated with carrier-carrier scattering, recombination and heavy doping are stressed. A transient quasi-three-dimensional simulation of a thyristor illustrates the state of the art in numerical power device modeling.

Published in:

Electron Devices Meeting, 1983 International  (Volume:29 )

Date of Conference:

1983

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