Cart (Loading....) | Create Account
Close category search window
 

A two-dimensional SI oxidation model including viscoelasticity

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Matsumoto, H. ; NEC Corp., Kawasaki, JAPAN ; Fukuma, M.

This paper proposes a new oxidation model that can be applied to spatially non-uniform oxidations in a two dimensional scheme. The model describes the viscoelastic deformation of SiO2and the oxidation masking material as well as the oxidant diffusion in the growing SiO2. The Maxwell model is assumed for the stress relaxation function. The viscoelastic equation is solved using the boundary element method. Simulations aimed for the LOCOS oxide growth result in good agreement with experimental data. This model is found to be suitable for oxidation characterization for VLSIs.

Published in:

Electron Devices Meeting, 1983 International  (Volume:29 )

Date of Conference:

1983

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.