By Topic

Influence of n+-layer-gate gap on short-channel effects of GaAs self-aligned MESFET's (SAINT)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kato, N. ; Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan ; Matsuoka, Y. ; Ohwada, K. ; Moriya, S.

Short-channel effects of GaAs n+-gate self-aligned MESFET's are investigated for different n+-layer-gate gaps. The gate lengths range from 0.1 to 1.5 µm. The fabrication features are self-aligned implantation for n+-layer technology (SAINT) and an electron-beam direct writing. The n+-layer-gate gap is controlled by the undercut process in the bottom resist of a multilayer resist acting as n+ion implantation mask. It is shown that the short-channel effects such as an increase in subthreshold current and a negative shift of threshold voltage can be substantially alleviated by enlarging the n+-layer-gate gap from 0.15 to 0.3 µm.

Published in:

Electron Device Letters, IEEE  (Volume:4 ,  Issue: 11 )