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A high-performance CMOS/SOS device with a gradually doped source—Drain extension structure

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3 Author(s)
M. -L. Chen ; RCA, Somerville, NJ ; B. C. Leung ; B. Lalevic

A gradually doped source-drain extension (GDDE) CMOS/SOS structure with n+ poly gate has been used to fabricate a high-performance CMOS/SOS inverter ring oscillator and 1%8 static binary counter. The 0.8-µm gate ring oscillator shows 80-ps stage delay at V_{DD} = 5 V, and it achieves 0.1 pJ of speed-power product with 95-ps stage delay. The plasma-etched epi island minimizes the edge leakage current, as shown in subthreshold characteristics.

Published in:

IEEE Electron Device Letters  (Volume:4 ,  Issue: 10 )