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The performance of a p+-n junction formed in GaAs by dual implantation of Zn and As was investigated. The transconductance in linear operation of the junction field-effect transistors (JFET's) in which the p+-gate was formed by the dual implantation was measured and analyzed on a simple one-dimensional model. As the dose of As was increased, the devices showed negatively shifted pinchoff voltage and higher transconductance. It was found that the co-implantation of As significantly decreased the width of the compensated layer in the junction, which improved the JFET's performance.